The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 1993
Filed:
Nov. 05, 1992
Takeshi Kasahara, Tsurugashima, JP;
Toko, Inc., Tokyo, JP;
Abstract
An semiconductor junction capacitance element equipped with the function of preventing electrostatic breakdown is disclosed in which a main PN junction adapted to serve as variable capacitance diode is defined in an epitaxial layer of a first conductivity type. A diffusion layer of the first conductivity type is provided in the epitaxial layer at a position spaced apart from a lateral PN junction which is exposed at major surface of the epitaxial layer so that the breakdown voltage of the lateral PN junction is set up to be lower than the breakdown voltage of the main PN junction by virtue of the provision of the diffusion layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile