The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 1993
Filed:
Feb. 25, 1991
Applicant:
Inventors:
Jean L Berger, Grenoble, FR;
Marc Arques, Grenoble, FR;
Assignee:
Thomson-CSF, Paris, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257446 ; 257 53 ; 257448 ; 257458 ; 257459 ; 257463 ; 257466 ; 257532 ; 257656 ;
Abstract
In a matrix array of photosensitive elements, each photosensitive point is provided with a photosensitive element (pin photodiode) in series with a capacitor between a row lead and a column lead. It is proposed to make use of a simplified photosensitive element in which an end semiconductor layer is suppressed such as, for example, the n-layer of a pin photodiode or the n-layer of a five-layer phototransistor of the nipin type. The dielectric of the capacitor then comes directly into contact with an intrinsic semiconductor layer in which electrons accumulate. These electrons reconstitute the equivalent of an n-type doped layer.