The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 1993

Filed:

Mar. 26, 1992
Applicant:
Inventors:

Hidenori Nakanishi, Itami, JP;

Shin-ichi Shikata, Itami, JP;

Itozaki Hideo, Itami, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D / ; C23C / ;
U.S. Cl.
CPC ...
505-1 ; 505730 ; 505702 ; 505701 ; 505731 ; 427 62 ; 427 63 ; 4274192 ; 4274193 ; 20419224 ;
Abstract

A [100] oriented ZrO.sub.2 thin film is formed on selected regions of a [100] deposition surface of a silicon substrate, and a Y.sub.2 O.sub.3 thin film deposited on the ZrO.sub.2 thin film and exposed regions of the deposition surface of the silicon substrate. A Y-Ba-Cu type compound oxide superconducting thin is deposited on the Y.sub.2 O.sub.3 thin film. The Y-Ba-Cu type compound oxide superconducting thin film positioned above the ZrO.sub.2 thin film is crystal-grown in a [001] orientation, and the Y-Ba-Cu type compound oxide superconducting thin film is crystal-grown in a [110] orientation in the other region.


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