The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 1993
Filed:
Oct. 01, 1991
Applicant:
Inventor:
Shogo Takahashi, Itami, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437150 ; 437 22 ; 437129 ; 437160 ;
Abstract
A method of diffusing a P type impurity into a semiconductor substrate includes selectively implanting ions of a first P type impurity into a semiconductor substrate and thermally diffusing a second P type impurity into the semiconductor substrate at least in a region where the first P type impurity ions are implanted. The diffusion speed of the P type impurity is increased in the ion implantation region whereby a P type impurity diffusion region which nearly corresponds in extent to the ion implantation region is obtained. The P type diffusion region can be precisely produced with a high dopant impurity concentration.