The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 1993
Filed:
May. 28, 1991
Applicant:
Inventor:
Lowell E Clark, Phoenix, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257327 ; 257335 ; 257341 ;
Abstract
A vertical power MOSFET structure having a source and base region which are not shorted together is provided. The source and base region are formed in a semiconductor substrate using a selectively patterned gate stack which is formed on the substrate as a mask. The drift region is formed of a semiconductor material covering a semiconductor substrate. The semiconductor substrate is of the same conductivity type as the drift region for a MOSFET and is of an opposite conductivity type for an IGBT.