The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 1993
Filed:
Oct. 23, 1992
Kazuo Miwada, Tokyo, JP;
NEC Corporation, , JP;
Abstract
A charge transfer device is equipped with a junction type field effect transistor coupled with the final stage of a transfer shift register for modulating current flowing therethrough depending upon the amount of electric charge from the transfer shift register, and the junction type field effect transistor comprises an n-type looped gate region formed in a p-type well, a p-type source region surrounded by the looped gate region, a p-type drain region opposite to the source region with respect to the looped gate region, and a p-type channel region defined in the p-type well beneath the looped gate region, wherein the p-type channel region is shallower or smaller in dopant concentration than remaining portion of the p-type well so that the current is effectively modulated with the electric charge.