The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 1993
Filed:
Mar. 12, 1992
Yutaka Nagai, Itami, JP;
Kenichi Kajiwara, Kamakura, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Mitsubishi Precision Kabushiki Kaisha, Kanagawa, JP;
Abstract
A superluminescent diode includes a substrate; a double heterojunction structure including a first conductivity type cladding layer, an undoped or first or second conductivity type active layer, and a second conductivity type cladding layer disposed on said substrate; a first conductivity type cap layer disposed on the second conductivity type cladding layer; and a second conductivity type stripe-shaped diffusion region penetrating the cap layer and reaching into the second conductivity type cladding layer. Current is injected into the active layer through the diffusion region. The stripe-shaped diffusion region extends from a front facet toward but not reaching a rear facet and is inclined an angle in a range from 3 to 20 degrees with respect to the front facet. Accordingly, repetition of reflection and amplification of light having a directionality perpendicular to the facets is decreased and the effective reflection of light from both facets is decreased, resulting in an SLD that can operate stably even in high power output operation without inviting laser oscillation and that can be produced with a high yield.