The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 1993
Filed:
Sep. 04, 1990
Electronics and Telecommunications Research, Chungnam, KR;
Abstract
A method for manufacturing a DRAM cell is provided having an isolation merged trench for applying to 16 megabit and 64 megabit DRAM cells, which includes the steps forming a primary dielectric for a capacitor within the interior of a trench, depositing an n.sup.+ doped polysilicon, forming a secondary dielectric and then stacking polysilicon thereon and connecting the polysilicon within an n.sup.+ diffusion layer of the bottom of the trench for forming a plate. As a result of this method all of the capacitors disposed between the n.sup.+ polysilicon storing electrode and the n.sup.+ polysilicon plate as well as the polysilicon storing electrode and the n.sup.+ diffusion layer plate are utilized as a storing capacitor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile