The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 1993

Filed:

Apr. 23, 1992
Applicant:
Inventors:

Wolfgang Thulke, Munich, DE;

Stefan Illek, Feldkirchen-Westerham, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ; H01S / ;
U.S. Cl.
CPC ...
372 20 ; 372 96 ; 372 46 ;
Abstract

A TTG-DFB laser diode on a doped substrate having a stripe-shaped layer structure that has an intermediate layer between an active layer and a tuning layer. A confinement layer laterally adjoins this layer structure at both sides, is doped for the same conductivity type as the substrate and is electrically conductively connected to the substrate through an interruption of the layers situated therebelow. An upper region, that respectively extends up to the surface and that is oppositely doped, is formed in the confinement layer above the layer structure. A lateral region, separated therefrom and that is electrically conductively connected via a lower confinement layer to a side of the layer structure facing toward the substrate, is formed in the confinement layer. Contact layers and contacts are applied on the upper region and on the lateral region, and a contact is applied on the substrate, so that separate current injection into both the active layer and the tuning layer is possible through the intermediate layer.


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