The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 1993
Filed:
Feb. 03, 1992
Eiichi Nagai, Kawasaki, JP;
Tetsuo Nishikawa, Odawara, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A charge coupled device (CCD) has a charge storage region and a potential barrier region. The CCD includes a first layer made of a first conductivity type semiconductor, a second layer made of a second conductivity type semiconductor and provided on the first layer, where the first and second conductivity types are mutually opposite types selected from n-type and p-type semiconductors, a third layer made of a first conductivity type semiconductor, impurity diffusion regions provided in at least a surface part of the third layer and having an impurity density higher than that of the third layer, a first gate electrode provided on the third layer between two mutually adjacent impurity diffusion regions, and a second gate electrode provided on each impurity diffusion region of the third layer. The impurity diffusion region forms the charge storage region of the CCD and the third layer between the two mutually adjacent impurity diffusion regions forms the potential barrier region of the CCD.