The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 1993

Filed:

Jun. 18, 1992
Applicant:
Inventors:

Koji Ohtsuka, Kawagoe, JP;

Noriyoshi Ohmuro, Kamifukuoka, JP;

Gen Koreeda, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437175 ; 437177 ; 437235 ; 148D / ;
Abstract

According to the present invention, there is provided a method of manufacturing a Schottky barrier semiconductor device with lesser variation of barrier height .phi.B which may stably be adjusted in a wide range. A Schottky barrier is formed by combination of an electrode layer, a Ti thin layer and Al layer. The Ti thin oxide layer between the Ti thin and Al layers may prevent variation of barrier height .phi.B during heat treatment. By controlling vacuum.


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