The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 1993

Filed:

Nov. 21, 1991
Applicant:
Inventor:

Charles S Rhoades, Los Gatos, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156656 ; 156664 ; 156665 ; 156668 ;
Abstract

A process is described for removing from an integrated circuit structure photoresist remaining after a metal etch which also removes or inactivates a sufficient amount of any remaining chlorine residues remaining from the previous metal etch to inhibit corrosion of the remaining metal for at least 24 hours. The process includes a first stripping step associated with a plasma, using either O.sub.2 gas and one or more fluorocarbon gases, or O.sub.2 gas and N.sub.2 gas; followed by a subsequent step using a combination of H.sub.2 O.sub.2 /H.sub.2 O vapors, O.sub.2 gas, and optionally N.sub.2 gas associated with a plasma. Preferably, the plasma is generated in a microwave plasma generator located upstream of the stripping chamber, and the stripping gases pass through this generator so that reactive species produced from the gases in the plasma enter the stripping chamber.


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