The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 1993
Filed:
Nov. 27, 1991
Iwao Takemoto, Hayano Mobara, JP;
Tatsuhisa Fujii, Cyubu Mobara, JP;
Atsushi Hasegawa, Hayano Mobara, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
An amplification MOSFET in a source ground form receives at its gate an output signal of a source-follower circuit through a second capacitor. The source-follower circuit, on the otherhand, receives a voltage of a first capacitor which receives a signal charge. A predetermined bias voltage is supplied to the gate of the amplification MOSFET through a switch device while the signal charge of the first capacitor is reset. According to this structure, the second capacitor can transmit only the signal component and the voltage signal itself can be amplified by the source ground type amplification MOSFET. The amplification MOSFET can be biased to its optimum operation point by the switch device during the reset period of the first capacitor; hence, sensitivity can be substantially improved with a simple circuit structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile