The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 1993
Filed:
May. 01, 1992
Harvey B Serreze, Pound Ridge, NY (US);
McDonnell Douglas Corporation, St. Louis, MO (US);
Abstract
A semiconductor laser device comprised of GaInP/AlGaInP materials which efficiently produces visible light output with improved carrier confinement and decreased threshold current density levels. The laser diode uses a strained quantum well positioned between a pair of graded index confinement layers which are in turn positioned between a pair of cladding layers. The active region is preferably comprised of Ga.sub.y In.sub.1-y P and the confinement layers are graded index layers comprised of (Al.sub.x Ga.sub.1-x).sub.0.51 In.sub.0.49 P in which the value of x is linearly graded from 0.40 to a maximum value selected from the range of 0.8 to 1.0 in a direction away from the active region. The cladding layers are comprised of (Al.sub.x Ga.sub.1-x).sub.0.51 In.sub.0.49 P in which the value of x is selected from the range 0.8 to 1.0. Bounding layers may be interdisposed between active region and the confinement layer on either side of the active region. The bounding layers are thin layers comprised of (Al.sub.x Ga.sub.1-x).sub.0.51 In.sub.0.49 P in which the value of x is in the range of 0.2-0.3 in the preferred embodiment.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile