The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 1993

Filed:

Sep. 24, 1992
Applicant:
Inventors:

Scott M Tyson, Colorado Springs, CO (US);

Gary M Wodek, Colorado Springs, CO (US);

Assignee:

United Technologies Corporation, Hartford, CT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 66 ; 257353 ; 257354 ; 257634 ; 257637 ; 257644 ; 257650 ;
Abstract

An integrated circuit has a silicon mesa disposed on a substrate and a field insulator structure in proximity to the mesa and having an opening over a top mesa surface. The opening, which exposes sidewalls in the structure, is positioned with respect to the mesa and has dimensions such that the structure is disposed to overlap a region of the mesa along an outer mesa periphery. A layer of polysilicon extends along a top surface of the structure and into the opening and adjacent to the mesa top surface. An insulator is disposed between the poly layer and the mesa top surface, the insulator having a layer of thermal gate oxide disposed adjacent to the poly layer and having a layer of pyrogenic oxide disposed between the thermal gate oxide layer and the mesa top surface.


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