The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 1993
Filed:
Sep. 07, 1990
Christine A Wang, Bedford, MA (US);
James N Walpole, Concord, MA (US);
Hong K Choi, Concord, MA (US);
Joseph P Donnelly, Carlisle, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A strained quantum-well diode laser with an AlInGaAs active layer and AlGaAs cladding and/or confining layers on a GaAs substrate is provided. AlInGaAs/AlGaAs lasers can be configured in laser geometries including ridge, waveguide, buried heterostructure, oxide-defined, proton-defined, narrow-stripe, broad-stripe, coupled-stripe and linear arrays using any epitaxial growth technique. Broad-stripe devices were fabricated in graded-index separate confinement heterostructures, grown by organometallic vapor phase epitaxy on GaAs substrates, containing a single Al.sub.y In.sub.x Ga.sub.l-x-y As quantum well with x between 0.14 and 0.12 and y between 0.05 and 0.17. With increasing Al content, emission wavelengths from 890 to 785 nm were obtained. Threshold current densities, J.sub.th 's, less than 200 A cm.sup.-2 and differential quantum efficiencies in the range 71 to 88 percent were observed.