The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 1993
Filed:
Dec. 17, 1991
Edoardo Botti, Vigevano, IT;
Guido Brasca, Varese, IT;
SGS-Thomson Microelectronics S.r.l., Milan, IT;
Abstract
Unitary-gain final stage particularly for monolithically integratable power amplifiers, which comprises a pair of final N-channel MOS power transistors. The first transistor has its drain terminal connected to a supply voltage and its source terminal connected to the drain terminal of the second transistor. The source terminal of the second transistor is connected to the ground. The output terminal of the power amplifier is connected between the source terminal of the first transistor and the drain terminal of the second transistor. The final stage furthermore comprises a high-gain feedback differential amplifier which has its non-inverting input terminal connected to the input of the power amplifier, its inverting input terminal connected to the output terminal of the differential amplifier and its output terminal connected to the gate terminal of the second transistor. A leveling circuit is furthermore connected to the gate terminal of the second transistor. A third MOS transistor has its source terminal connected to the input of the amplifier, and its gate terminal and drain terminal are connected to the gate terminal of the first transistor and to a first driven current source.