The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 1993

Filed:

Oct. 16, 1991
Applicant:
Inventor:

Hiroshi Wabuka, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ;
U.S. Cl.
CPC ...
307475 ; 307451 ;
Abstract

An output buffer of a semiconductor integrated circuit, including a P channel MOS transistor connected between first power source and an output terminal and a first N channel MOS transistor connected between a second power source and the output terminal, the first P and N channel MOS transistors being complementarily brought into a conductive state depending upon the level of an input signal given to the gates thereof for driving an output load including a signal transmission line connected with the output terminal is characterized in that each of said P and N channel MOS transistors has an output resistance equal to the characteristic impedance of the signal transmission line and in that said output buffer further includes an auxiliary control unit comprising a second N channel MOS transistor having an output resistance equal to the characteristic impedance of the signal transmission line connected in parallel with said first N channel MOS transistor between the second power source and the output terminal, and a pulse generating circuit and a drive circuit for determining the conduction period of time of the second N channel MOS transistor, which is connected with the gate of the second N channel MOS transistor.


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