The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 1993
Filed:
Mar. 02, 1992
Applicant:
Inventor:
Raphael Tsu, Charlotte, NC (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 17 ; 257 21 ; 257 18 ; 257 20 ; 257 22 ; 257 24 ; 257 25 ; 257411 ; 372 45 ;
Abstract
A quantum well structure useful for semiconducting devices comprises two barrier regions and a thin epitaxially grown monocrystalline semiconductor material quantum well sandwiched between said barrier regions. Each barrier region consists essentially of alternate strain layers forming a superlattice, each of said layers being thinner than said quantum well. The layers are so thin that no defects are generated as a result of the release of stored strain energy.
Tsu, Raphael. (1993). Quantum well structures useful for semiconductor devices (U.S. Patent No. 5216262). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5216262
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile