The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 1993
Filed:
Jun. 27, 1991
Applicant:
Inventors:
Assignee:
Max-Planck Gesellschaft zur Foerderung der Wissenschaften e.V., Goettingen, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; G02F / ;
U.S. Cl.
CPC ...
257-9 ; 257 12 ; 257 20 ; 257192 ; 257280 ; 257464 ; 257592 ; 257593 ; 257604 ; 257656 ; 359243 ;
Abstract
An optically bistable semiconductor device which has a doped or undoped gallium arsenide substrate and a series of alternating n-type and p-type Dirac-delta doped monoatomic layers formed on the substrate. Each Dirac-delta doped monoatomic layer is separated from the next adjacent Dirac-delta doped monoatomic layer by a layer of pure, undoped intrinsic semiconductor material such as gallium arsenide.