The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 1993
Filed:
Dec. 30, 1988
Masaaki Kinugawa, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor device includes a semiconductor body of one conductivity type, source and drain regions formed in the surface area of the semiconductor body, a gate insulating film formed on the semiconductor body between the source and drain regions, a gate electrode formed on the gate insulating film, an insulating member formed on the source and drain regions and in contact with the side walls of the gate electrode. Each of the source and drain regions includes a first impurity region of the opposite conductivity type and a second impurity region having a higher impurity concentration than that of the first impurity region and formed in the first impurity region to extend below the gate electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile