The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 1993
Filed:
Nov. 29, 1991
Kazuhiro Okawa, Hirakata, JP;
Tsuneo Mitsuyu, Hirakata, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
This invention relates to a pn-junction device, especially a blue light-emitting diode and a method of the manufacturing thereof. The pn-junction is formed between a superlattice region and a n-type semiconductor region, the superlattice region consisting of a plurality of stacked pairs of ZnSe semiconductor layer and acceptor-impurity-doped ZnS.sub.0.12 Se.sub.0.88 mixed crystal semiconductor layer formed on a part of a buffer layer of ZnS.sub.0.06 Se.sub.0.94 etc. which is formed on a crystalline substrate of GaAs etc., the n-type semiconductor region being formed on the part of the buffer layer, where the superlattice is not formed, and the side wall of the superlattice region contiguous to the n-type region to form pn-junction being made clean by etching, so that a pn-junction of n-type semiconductor and p-type semiconductor having high carrier-density resulted.