The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 1993
Filed:
Apr. 23, 1991
Curt Dunnam, Trumansburg, NY (US);
Cornell Research Foundation, Inc., Ithaca, NY (US);
Abstract
An extremely fast high-voltage driver for nanosecond-level switching of gallium arsenide PIN semiconductor devices and other reactive loads utilizes two stages of voltage level translation to permit low voltage TTL logic control signals to control the application of high voltage switching pulses to a load. The circuit utilizes an input stage responsive to TTL level signals to drive a first voltage level translating stage which produces high voltage pulses complementary to the input pulses. The increased voltage pulses are supplied through an intermediate power gain stage to provide amplification of the pulse power level. The amplified pulse is supplied to an output stage for additional level conversion to thereby provide high voltage switching signals to a PIN switch or other reactive load.