The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 1993
Filed:
Sep. 04, 1990
Douglas R Sparks, Kokomo, IN (US);
John C Christenson, Kokomo, IN (US);
James M Himelick, Kokomo, IN (US);
Delco Electronics Corporation, Kokomo, IN (US);
Abstract
A trench capacitor within an integrated circuit is provided which is filled with solid elemental metal. This metal-filled trench capacitor is formed by the following steps. First a trench is conventionally formed within a silicon substrate. A dielectric film is then blanket deposited onto the substrate and within the trench, so that the walls and bottom surface of the trench are completely covered. A metal-containing liquid solution is next deposited within the trench, and heated to a temperature sufficient to thermally decompose the metal compound within the liquid solution and drive off any solvent from the solution, thereby leaving a plate of elemental metal within the trench capacitor. The metal-filled capacitor is accordingly characterized by high electrical conductivity. The method may also be utilized to form a metal contact to a buried layer within an integrated circuit; a rectifying contact or Schottky diode; contacts to the substrate; metal diffusion barrier layer; and interconnection metallization.