The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 1993
Filed:
May. 15, 1991
Applicant:
Inventors:
Jun Qiu, Woodbury, MN (US);
Hwa Cheng, Woodbury, MN (US);
Michael A Haase, Woodbury, MN (US);
James M DePuydt, St. Paul, MN (US);
Assignee:
Minnesota Mining and Manufacturing Company, St. Paul, MN (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437185 ; 437105 ; 437129 ; 437965 ; 148D / ; 148D / ;
Abstract
A method for producing an ohmic contact to a p-type ZnSe semiconductor body in a molecular beam epitaxy chamber. Zinc, thermally cracked Se.sub.2 and nitrogen are injected into the chamber. A ZnSe contact layer is grown by heating the semiconductor body to a temperature less than 250.degree. C., but high enough to promote crystalline growth of the layer doped with nitrogen to a net acceptor concentration of at least 1.times.10.sup.18 cm.sup.-3.