The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 1993
Filed:
May. 17, 1991
Applicant:
Inventors:
Masahiro Sasaki, Yokohama, JP;
Yoshito Kawakyu, Kawasaki, JP;
Hironori Ishikawa, Tokyo, JP;
Masao Mashita, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156614 ; 156610 ; 156611 ; 156612 ; 156613 ; 156D / ; 156D / ; 156D / ; 156D / ;
Abstract
A vapor-phase epitaxial growth method for group III-V compound semiconductor crystal layers by which alternating layers of (InAs)1 and (GaAs)1 are grown on an InP substrate by means of vapor-phase epitaxy while different material gases are supplied alternately. The substrate is irradiated with excimer laser light when a specific layer of the crystal layers is grown, thereby controlling the thickness of the specific crystal layer on a monoatomic scale.