The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 1993
Filed:
Sep. 16, 1991
Rosette Azoulay, Fontenay aux Rose, FR;
Louis Dugrand, Chelles, FR;
Abstract
This process consists of depositing on a III-V or II-VI material (2) a mask layer (6), etching the latter in order to form therein openings (9) facing areas of the material on which epitaxy is to be carried out and then carrying out the epitaxy of the semiconductor layer (14) on said areas in an OMCVD frame by subjecting, at atmospheric pressure, the masked material simultaneously to vapours of chemical species of at least one III or II element and at least one V or VI element, as well as to vapours of HCl or at least one halide of a V or VI element, the elements III and V or II and VI of the chemical species and the halide being those which will form the semiconductor layer, said species being organometallic and/or hydrogen compounds. It is also possible, just prior to the epitaxy stage, to etch (12) the unmasked areas of the material, at atmospheric pressure, in the same frame as for the epitaxy using vapours of at least one halide of a III, V, II or VI element constituting the material to be etched.