The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 1993
Filed:
Apr. 01, 1991
Applicant:
Inventors:
Assignee:
Osaka Titanium Co., Ltd., Hyogo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
1566162 ; 1566207 ; 15662071 ; 15662073 ; 15662074 ; 156D / ; 423D / ;
Abstract
A method of producing single-crystal silicon is disclosed. Polycrystalline silicon rod is formed from polycrystalline silicon granules, lumps or a mixture thereof by continuous casting through electromagnetic induction. Then, silicon single cyrstal is grown from the polycrystalline silicon rod by the FZ method.
Quick Actions:
Kaneko, Kyojiro. (1993). Method for producing silicon single crystal from polycrystalline rod (U.S. Patent No. 5211802). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5211802
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile