The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 1993
Filed:
Oct. 21, 1991
Steven E Shields, San Diego, CA (US);
Ogden J Marsh, Carlsbad, CA (US);
Hughes-JVC Technology Corporation, Carlsbad, CA (US);
Abstract
A photosensitive layer of a liquid crystal light valve is made of a single crystal silicon wafer (14,70) bearing an irregular pattern of diodes (50a,50b, 60a,60b). The diodes are varied in size, shape and location so as to improve resolution, reduce interaction between the diode spatial pattern and the spatial pattern of input data, and, in one embodiment, to eliminate a difficult masking step. A masking step is eliminated by co-depositing a metal vapor and a silicon dioxide vapor to form random islands of cermets (50a,50b), each comprising an island of metal surrounded by a body of silicon dioxide. In other embodiments a pseudo-random mask is employed having an irregular pattern of holes (76) of varied sizes and locations. The mask is employed to photolithographically form an irregular pattern of holes in a silicon dioxide layer (72) laid down over the single crystal silicon (70) and a layer of metal (78) is deposited to provide areas of metal within the irregular pattern of holes in contact with the single crystal silicon layer. Alternatively, the mask with irregular holes may be employed to control areas in which an N-type ion dopant is implanted in a P-type silicon crystal.