The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 1993
Filed:
Oct. 31, 1990
Applicant:
Inventors:
Yasunori Nakazaki, Suwa, JP;
Kazuki Hirakawa, Suwa, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257530 ;
Abstract
A semiconductor element chiefly serving as an anti fuse and a manufacturing method thereof, the anti fuse storing data by causing a transition from a high resistance state to a low resistance state by a current supplied when a voltage is imposed. The element has a three-layer electrode structure composed of an upper electrode, amorphous silicon and a silicon insulation film thereby to improve the stability and reproducibility of the programming voltage and current.
Nakazaki, Yasunori. (1993). Semiconductor element having a resistance state transition region of (U.S. Patent No. 5210598). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5210598
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile