The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 1993

Filed:

Jul. 05, 1991
Applicant:
Inventors:

Kazuhiko Kakizoe, Tokyo, JP;

Hiroaki Murakami, Tokyo, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257361 ; 257344 ; 257408 ; 257315 ;
Abstract

A semiconductor device equipped with an input protection circuit having a high withstand voltage and an improved reliability. The input protection circuit of the semiconductor device includes a gate insulation film provided on the semiconductor substrate corresponding to a region between the source region and the drain region, having a thickness greater than that of a gate insulation film in the FET of the semiconductor device, where one of the source region and the drain region is connected with an external input terminal for the semiconductor device, while the gate electrode and the other one of the source region and the drain region are connected with a power source for the semiconductor device.


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