The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 1993
Filed:
Oct. 17, 1990
Applicant:
Inventors:
Shinji Nakaguma, Fukuoka, JP;
Toshinobu Banjyo, Fukuoka, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437225 ; 437228 ; 427569 ; 118501 ; 118620 ;
Abstract
In an apparatus for the plasma treatment of semiconductor devices, a cover is provided on the outer periphery of the space between the upper and lower electrodes. By virtue of the provision of the cover on the outer periphery of the inter-electrode space, the processing gas ejected from ejection holes on one surface of the upper electrode diffuses evenly in the inter-electrode space to reach the surface of the semiconductor wafer. Therefore, it is possible to improve the efficiency at which the wafer is processed as well as the evenness with which various portions of the surface of the wafer are treated.