The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1993
Filed:
Mar. 11, 1991
John S Batchelder, Somers, NY (US);
Philip C Hobbs, Briarcliff Manor, NY (US);
Marc A Taubenblatt, Pleasantville, NY (US);
Douglas W Cooper, Millwood, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Apparatus and a method for performing high resolution optical imaging in the near infrared of internal features of semiconductor wafers uses an optical device made from a material having a high index of refraction and held in very close proximity to the wafer. The optical device may either be a prism or a plano-convex lens. The plano-convex lens may be held in contact with the wafer or separated from the wafer via an air bearing or an optical coupling fluid to allow the sample to be navigated beneath the lens. The lens may be used in a number of optical instruments such as a bright field microscope, a Schlieren microscope, a dark field microscope, a Linnik interferometer, a Raman spectroscope and an absorption spectroscope.