The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1993
Filed:
Jan. 24, 1992
Applicant:
Inventors:
Harvey Endler, Van Nuys, CA (US);
Hadi Mojaradi, Los Angeles, CA (US);
Assignee:
Systron Donner Corporation, Sylmar, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F / ;
U.S. Cl.
CPC ...
330295 ; 3301 / ; 330289 ; 330 84 ; 330 65 ;
Abstract
A Class A high power amplifier having an operating frequency in the range of less than substantially 2 GHz and suitable for aircraft use, is all solid state in that gallium arsenide field effect transistors are utilized. These are mounted in a large copper heat sink which is air cooled to provide for overall cooling by conduction and convection. By the use of microstrip matching circuits, the relatively low impedance of the gallium arsenide FET units is matched to the required higher system impedance. At the same time a 40% band-width is provided due to the superior matching.