The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 1993

Filed:

Aug. 31, 1992
Applicant:
Inventors:

Akira Takiba, Yokohama, JP;

Osamu Matsumoto, Yokohama, JP;

Yukihiro Saeki, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ;
U.S. Cl.
CPC ...
307362 ; 3072964 ; 3072965 ; 307350 ; 307451 ; 307475 ;
Abstract

A potential detecting circuit comprises a first MOS transistor of a first conductivity type whose drain receives an input potential that is equal to or lower, in absolute value, than a second potential whose absolute value is higher than that of a first potential, a second MOS transistor of a second conductivity type whose source is connected to the source of the first transistor and gate receives the first potential, a third MOS transistor of the first conductivity type whose source is connected to the second MOS transistor, source receives a reference potential whose absolute value is lower than that of the first potential, and gate receives the first potential, a detecting potential control block for applying to the first MOS transistor a potential varying in accordance with the input potential, and a potential detect output terminal for providing a detected potential, the potential detect output terminal being a junction between the drains of the second and third MOS transistors.


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