The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1993
Filed:
Nov. 01, 1991
Toshinori Ohmi, Higashiosaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A process for preparing a BiCMOS semiconductor device having a MOS transistor element and a bipolar transistor element both of which are constituted in an epitaxial layer of n-type conductivity formed on a substrate of p-type conductivity, which comprises applying, after the formation of said epitaxial layer, an impurity ion of high energy simultaneously to specific of said epitaxial layer under which a channel region of said MOS transistor element and an emitter region of said bipolar transistor element are to be formed, thereby forming highly doped impurity regions around the bottom of said channel region and around the bottom of a base region of said bipolar transistor element.