The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1993
Filed:
Jun. 28, 1991
Rajiv R Shah, Sugar Land, TX (US);
Stephen A Keller, Sugar Land, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A high voltage bipolar transistor (10) is fabricated in an N- HV/epitaxial well (12) formed by an N- substrate implant and the overlying portion of the N- epitaxial layer 12b. The N- substrate implant replaces the normal buried N+ collector layer, in effect extending the depth of the epitaxial layer to increase junction breakdown voltages. The collector is formed by buried N+ collector regions (14a and 14b) formed adjacent to, and on either side of, the N- substrate implant. The transistor is fabricated conventionally in the N- HV/epitaxial well, except that, to further enhance high voltage performance, P+ extrinsic base regions (23a and 23b) can be extended using optional deep P+ implants (reducing curvature effects which correspondingly reduces electric field, and thereby inhibits premature junction breakdown).