The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 1993

Filed:

Oct. 15, 1991
Applicant:
Inventor:

Shinichi Iwashita, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F / ; H03K / ;
U.S. Cl.
CPC ...
307530 ; 307355 ; 307359 ; 307548 ; 307550 ; 36518906 ; 36518911 ; 365205 ; 365208 ;
Abstract

A sense amplifier for a non-volatile semiconductor storage device includes a true and a complementary load circuit which are for holding the potentials of input signals and which have the current driving capability lower than that of each memory cell of the semiconductor storage device. These true and complementary load circuits are connected with a true and a complementary input terminal of the conventional sense amplifier. In accordance with the output logical value of the sense amplifier, if it is in the 'H' level, the complementary load circuit is activated whereas if it is in the 'L' level, the true load circuit is activated. In this way, the operation speed of the sense amplifier at a memory cell selecting operation can be effectively improved.


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Iwashita, Shinichi. (1993). Sense amplifier for non-volatile semiconductor storage device (U.S. Patent No. 5206552). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5206552

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