The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 1993
Filed:
May. 30, 1991
Masahiro Kotaki, Inazawa, JP;
Katsuhide Manabe, Inazawa, JP;
Masaki Mori, Inazawa, JP;
Masafumi Hashimoto, Nagoya, JP;
Toyoda Gosei Co., Ltd., Nishikasugai, JP;
Kabushiki Kaisha Toyota Chuo Kenkyusho, Aichi, JP;
Abstract
A dry etching method for Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.1) semiconductor uses plasma of a boron trichloride (BCl.sub.3) gas. The etching rate of the method is 490 .ANG./min. No crystal defect is produced in the etched semiconductor by the dry etching with the plasma of a BCl.sub.3 gas. After etching with the plasma of a BCl.sub.3 gas, the semiconductor is successively etched by an inert gas. The electrode formed on the etched surface is contacted ohmicly with the semiconductor. Ohmic contact can be obtained without sintering. An LED is produced by the dry etching method. The LED comprises a substrate, an n-layer (Al.sub.x Ga.sub.1-x N; 0.ltoreq.x<1), an i-layer, an electrode formed on the etched surface of the n-layer through a through hole, the through hole being formed through the i-layer to the n-layer by the dry etching with the plasma of the born trichloride (BCl.sub.3) gas and being successively etched by the plasma of an inert gas, and an electrode formed on the surface of said i-layer.