The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 1993
Filed:
Mar. 13, 1991
Applicant:
Inventors:
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; G02B / ;
U.S. Cl.
CPC ...
156664 ; 65-314 ; 359130 ; 359126 ;
Abstract
A method to fabricate nonlinear optical frequency doubler devices comprised of a process to form periodic tantalum masks on a LiNb.sub.x Ta.sub.1-x O.sub.3 (wherein 0.ltoreq.x.ltoreq.1) crystal substrate, a process to form periodic proton exchanged regions by applying a phosphoric acid treatment, and a process to form an optical waveguide on the surface of said crystal. According to this fabrication method of the present invention, deeper domain-inverted regions can be formed on said crystal surface, and by this, a fundamental wave can be transformed into a harmonic wave at a high efficiency.