The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1993
Filed:
Jul. 12, 1991
Applicant:
Inventor:
Kenya Sakurai, Kanagawa, JP;
Assignee:
Fuji Electic Co., Ltd., Kanagawa, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257356 ; 257603 ; 257 49 ;
Abstract
A MOS semiconductor device having a surge protecting circuit comprising a semiconductor substrate having a major surface, a plurality of electrodes overlying the major surface, a MOS circuit in the major surface, and a bidirectional semiconductor surge absorber coupled between the gate of the MOS circuit and a reference electrode contacting the major surface of the substrate. In another embodiment, the MOS semiconductor device further comprises a bidirectional Zener diode connected in series with the bidirectional semiconductor surge absorber.