The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1993
Filed:
May. 07, 1991
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
High-frequency transistors are formed on a semiconductor substrate. Each transistor includes an emitter having a fish-bone structure, a base formed to surround the emitter, and a base lead region connected to the base. A resistor layer having the same conductivity type as that of the base lead region, and an impurity concentration and a junction depth equal to those of the base lead region is formed in the substrate. An emitter electrode is connected to the emitter and the resistor layer. A portion of the emitter electrode connected to the resistor layer has an interdigital structure, and is connected to the resistor layer at two or more contact surface portions or an interdigital surface portion. An electrode on the wiring layer side is connected to the resistor layer. A portion of the electrode connected to the resistor layer has an interdigital structure which matches with the interdigital structure of the emitter electrode.