The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 1993

Filed:

Nov. 29, 1991
Applicant:
Inventor:

W David Pace, Tempe, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ;
U.S. Cl.
CPC ...
307571 ; 307300 ; 3072471 ; 307270 ; 307279 ;
Abstract

A gate driver circuit for switching a MOSFET on and off while reducing the turn off delay of the MOSFET without effecting the turn off slew rate thereof includes a low impedance circuit path between the gate and drain of the MOSFET which is responsive to a control signal for providing discharge of the gate capacitance and a controlled current discharge path for controlling the slew rate of the drain voltage. The low impedance circuit path is automatically disabled once the threshold voltage of the MOSFET is reached and the MOSFET begins to turn off as the drain voltage reaches a predetermined level. As the low impedance circuit path is disabled the controlled current discharge path fixes the slew rate or dv/dt of the drain to source voltage during turn off of the MOSFET.


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