The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1993
Filed:
Mar. 21, 1991
Yuichi Nakashima, Hyogo, JP;
Shintaro Matsuda, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A resin sealed semiconductor device for use in testing is disclosed, in which a first MOS field effect transistor is formed in a region within 100 .mu.m from an outer perimeter of a main surface of a silicon substrate, and a second MOS field effect transistor is formed in a region 100 .mu.m or more distant from an outer perimeter of the main surface, and the first and second MOS field effect transistors are encapsulated with resin. Dimensions and materials of the first MOS field effect transistor and the second MOS field effect transistor are identical. By comparing the electric characteristics of the first MOS field effect transistor and the electric characteristics of the second MOS field effect transistor, the effect produced on the MOS field effect transistors by the mechanical stresses due to the resin seal applied from a side direction of silicon substrate can be evaluated.