The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1993
Filed:
Jan. 27, 1992
Applicant:
Inventors:
Masayoshi Tsuji, Tokyo, JP;
Kikuo Makita, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 21 ; 257187 ; 257186 ; 257438 ; 257185 ;
Abstract
An avalanche photodiode includes an avalanche multiplication layer of a hetero-periodical structure consisting of alternately provided barrier and well layers. Each barrier layer includes a multi-quantum barrier layer consisting of alternately provided short-width barrier and well layers. The barrier and well layers include respectively first and second III-group elements which meet the following conditions: