The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1993
Filed:
Mar. 20, 1992
Souichi Imamura, Yokohama, JP;
Toru Suga, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
After a silicon nitride film is deposited on a compound semiconductor substrate, another insulating film such as a silicon dioxide film is provided thereon so as to define a channel region in the semiconductor substrate. Impurity ions such as Si ions are selectively implanted into the semiconductor substrate in the presence of the silicon nitride film and the insulating film, thereby providing source and drain regions and the channel region therein. The insulating film and the silicon nitride film located above the channel region are successively removed to provide a Schottky gate electrode thereon. The silicon nitride film is selectively removed from the substrate surface to provide source and drain electrodes on their regions. Accordingly, MESFETs can be produced without exposing the substrate surface during its manufacture.