The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1993
Filed:
Feb. 03, 1992
Bradley M Somero, Austin, TX (US);
James D Hayden, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A bipolar transistor (10) with reduced substrate trenching and reduced base electrode size. A substrate (12) is provided with an overlying first dielectric layer (20), an overlying first conductive layer (24), an overlying second dielectric layer (26), and a doped collector region (14, 16, and 18). An opening is formed within the layers (20, 24, and 26) forming a sidewall of conductive layer (24). A doped base diffusion (28) is formed within a portion of the substrate (12) exposed by the opening. A conductive grown region (30) is formed laterally adjacent the sidewall of conductive layer (24) and overlies substrate (12). A spacer (32) is formed adjacent a first portion of the conductive grown region (30). A second portion of the conductive grown region (30) is removed forming an exposed portion of substrate (12). A second spacer (36) is formed adjacent spacer (32). A conductive layer (38), which forms a doped emitter region is formed overlying the exposed portion of substrate (12).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile