The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 1993

Filed:

Nov. 18, 1991
Applicant:
Inventor:

Keith J Hansen, San Jose, CA (US);

Assignee:

LSI Logic Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156643 ; 156345 ; 118715 ; 118724 ; 118723 ;
Abstract

During the cleaning of CVD chamber walls with an etch gas of NF.sub.3, the reaction chamber walls are heated to above 65.degree. C. while maintaining a relatively low chamber pressure during etching of the chamber with NF.sub.3. Any reaction of the NF.sub.3 with the quartz (SiO.sub.2) walls of the chamber, and with any reaction by-products remaining in the chamber, will not condense on the walls of the chamber, since, at this relatively high temperature, these reaction products will be volatile and will be purged away with the NF.sub.3.


Find Patent Forward Citations

Hansen, Keith. (1993). Method for performing in-situ etch of a cvd chamber (U.S. Patent No. 5203956). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5203956

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…