The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 1993
Filed:
Dec. 02, 1991
Martin Moskovits, Toronto, Ontario, CA;
Other;
Abstract
Quantum dot and quantum wire semiconductors in the nanosize range are produced by a process which utilizes a microporous aluminum oxide surface layer on an aluminum metal substrate as a template for the semiconducting material. The microporous surface layer is prepared by anodizing an aluminum substrate in an acid bath. Then a metal capable of forming a semiconductor compound is electrodeposited into the surface micropores, the oxide is partially or wholly etched away, and the deposited metal is reacted with a liquid or gaseous reagent to convert it chemically to a semiconducting compound. By the process of the invention, there are produced quantum dot or quantum wire semiconductors in the form of an array of substantially mutually parallel, substantially uniform-sized rods of semiconductor material protruding from an electrically conductive substrate, each rod having a diameter less than 100 nanometers.