The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 1993
Filed:
Sep. 20, 1991
Applicant:
Inventor:
Kiyoshi Ishibashi, Itami, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 51 ; 437228 ; 437927 ;
Abstract
A method of manufacturing a semiconductor acceleration includes oxidizing a silicon wafer, removing the oxide film and underlying silicon in a U-shaped pattern at a front surface of the wafer by etching to form a portion that is to become a cantilever, depositing a thin metal film covering the U-shaped pattern that is to become the cantilever, etching a recessed portion in the rear surface of the silicon wafer encompassing the U-shaped pattern, thereby forming the cantilever, dicing the silicon wafer into chips, and removing at least part of the thin metal film, thereby releasing the cantilever.